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Improving the Surface Roughness of CVD-SiC by SPDT


          




Project Time Frame: January 2006 – April 2007 

Material:3C Beta Polycrystalline CVD Coated Silicon Carbide (SiC)        

Project Aim: * Improve the surface roughness of the material without causing any                                                                                                      ................surface/subsurface damage

                  * Maximize on material removal rate by varying the depth of cut, feed rate and  
                cutting speed
             * Minimize diamond tool wear
Project Description: Silicon carbide (SiC) is one of the advanced engineered ceramics materials designed to operate in extreme environments. One of the main reasons for the choice of this material is due to its excellent electrical, mechanical and optical properties that benefit the semiconductor, MEMS and optoelectronic industry respectively. Manufacture of this material is extremely challenging due to its high hardness, brittle characteristics and poor machinability. Severe fracture can result when trying to machine SiC due to its low fracture toughness. However, from past experience it has been proven that ductile regime machining of silicon carbide is possible. The main goal of the subject research is to improve the surface quality of a chemically vapor deposited (CVD) polycrystalline SiC material to be used in an optics device such as a mirror. Besides improving the surface roughness of the material, the research also emphasized increasing the material removal rate (MRR) and minimizing the diamond tool wear. The surface quality was improved using a Single Point Diamond Turning (SPDT) machining operation from 1160nm to 85nm (Ra) and from 8.50μm to 0.55μm (Rz; peak-to-valley).









Project in Detail: View

Related Publications:

  1. "Improving the Surface Roughness of a CVD coated SiC Disk by Performing Ductile Regime Single Point Diamond Turning", ASME-MSEC. Chicago, 2008. View
  2. "A Manufacturing Process to Improve the Surface Roughness of a CVD Coated SiC Disk 
    by Performing Ductile Regime Single Point Diamond Turning", International Conference on Agile Manufacturing, Michigan, USA, 2008. View
  3. "Ductile Regime Single Point Diamond Turning of CVD-SiC Resulting in an Improved and Damage-Free Surface", 4th International Conference on Recent Materials & Processing, Penang, Malaysia, 2009. View
  4. "Single Point Diamond Turning Effects on Surface Quality and Subsurface Damage in Ceramics", ASME-MSEC, West Lafayette, Indian, USA, 2009. View
Related Presentations:

  1. "Improving the Surface Roughness of a CVD coated SiC Disk by Performing Ductile Regime Single Point Diamond Turning", ASME-MSEC. Chicago, 2008. View
  2. "A Manufacturing Process to Improve the Surface Roughness of a CVD Coated SiC Disk 
    by Performing Ductile Regime Single Point Diamond Turning", International Conference on Agile Manufacturing, Michigan, USA, 2008. View
  3. "Ductile Regime Single Point Diamond Turning of CVD-SiC Resulting in an Improved and Damage-Free Surface", 4th International Conference on Recent Materials & Processing, Penang, Malaysia, 2009. View
  4. "Single Point Diamond Turning Effects on Surface Quality and Subsurface Damage in Ceramics", ASME-MSEC, West Lafayette, Indian, USA, 2009. View

Material Data Sheet: View

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