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Subsurface Damage Analysis on Single Point Diamond Turned Ceramics

          

Project Time Frame: May 2008 – August 2008 

Material:(1)3C Beta Polycrystalline CVD Coated Silicon Carbide (SiC) 

          (2) Synthesized Fused Silica (Spectrosil 2000)       

Project Aim: * The main goal of this project is to confirm that single point diamond turning   ................not only leaves a damage-free surface but also an undamaged subsurface layer

                  * Attempt to confirm the existence of an amorphous layer beneath the machined  
                layer of CVD-SiC           
Project Description: Advanced ceramics, such as Silicon Carbide (SiC) and Quartz, are increasingly being used for industrial applications. These ceramics are hard, strong, inert, and light weight. This combination of properties makes them ideal candidates for tribological, semiconductor, MEMS and optoelectronic applications respectively. Manufacturing these materials without causing surface and subsurface damage is extremely challenging due to their high hardness, brittle characteristics and poor machinability. Often times, severe fracture can result when trying to achieve high material removal rates during machining of SiC or quartz due to their low fracture toughness. This research demonstrates that ductile regime Single Point Diamond Turning (SPDT) is possible on these materials to improve its surface quality without imparting subsurface damage. Machining parameters, such as depth of cut and feed, used to carry out ductile regime machining will be discussed. Subsurface damage analysis was carried out on the machined samples using non-destructive methods such as Optical Microscopy, Raman Spectroscopy and Scanning Acoustic Microscopy to show evidence that the chosen material removal method leaves a damage-free surface and subsurface. Optical microscopy was used to image the improvements in surface finish whereas Raman spectroscopy and scanning acoustic microscopy was used to observe the formation of amorphous layer and subsurface imaging in the machined regions. All three techniques complement the initial hypothesis of being able to remove a nominally brittle material in the ductile regime.












Project in Detail: View

Related Publications:
  1. "Ductile Regime Single Point Diamond Turning of CVD-SiC Resulting in an Improved and Damage-Free Surface", 4th International Conference on Recent Materials & Processing, Penang, Malaysia, 2009. View
  2. "Single Point Diamond Turning Effects on Surface Quality and Subsurface Damage in Ceramics", ASME-MSEC, West Lafayette, Indian, USA, 2009. View
Related Presentations:
  1. "Ductile Regime Single Point Diamond Turning of CVD-SiC Resulting in an Improved and Damage-Free Surface", 4th International Conference on Recent Materials & Processing, Penang, Malaysia, 2009. View
  2. "Single Point Diamond Turning Effects on Surface Quality and Subsurface Damage in Ceramics", ASME-MSEC, West Lafayette, Indian, USA, 2009. View

Material Data Sheet: SiC & Quartz

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